Silicon Carbide Bearing
  • Silicon Carbide BearingSilicon Carbide Bearing
  • Silicon Carbide BearingSilicon Carbide Bearing

Silicon Carbide Bearing

Silicon carbide is an ideal material for bearings. It has good corrosion resistance, great mechanical strength under high temperature and excellent wear resistance. Nextgen Advanced Materials supplies Silicon Carbide Bearing with high quality and fast delivery. Customization is also available.

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Product Description

Nextgen Advanced Materials supplies Silicon Carbide Bearing with high quality and fast delivery. Silicon carbide (SiC) is a lightweight ceramic material with high strength properties comparable to diamond. It has excellent thermal conductivity, low thermal expansion, and is resistant to corrosion from acids. Silicon carbide is an excellent ceramic material for applications requiring good erosion and abrasive resistance. Consequently, it is useful in a variety of applications including spray nozzles, shot blast nozzles and cyclone components.


Silicon carbide is an ideal material for sealing rings and bearings. The SiC bearing has good corrosion resistance, great mechanical strength under high temperature and excellent wear resistance. We can supply ring and bearing products made by SiC as well as other SiC parts. 


Silicon Carbide Bearings Specifications

Item Parameter
Inner Diameter (ID) 4~100mm
Outer Diameter (OD) ID + 5~40mm
Length/Thickness 4~34mm
Material SiC, ZrO2, Si3N4


Material Properties Reaction Bonded Silicon Carbide

Item Unit Parameter
Density gm/cc 3.1
Crystal Size (Average) Microns 12
Water absorption (open porosity) % 0
Gas permeability % 0
Color ¯ Black
Flexural Strength (MOR) 20°C MPa (psi x 103)  462 (67)
Elastic Modulus 20°C GPa (psi x 106)  393 (57)
Poisson’s Ratio 20°C ¯  0.20
Compressive Strength 20°C MPa (psi x 103)  2700 (363)
Hardness GPa (kg/mm2)  26 (2500)
R45N  –
Tensile Strength 25°C MPa (psi x 103)  307 (44.5)
Fracture Toughness K (I c) mpa m1/2  4
Thermal Conductivity 20°C W/m K 125
Coefficient of Thermal Expansion 25-1000°C X 10-6/°C 4.3
Specific Heat 100°C 880 J/kg*K 800
Thermal Shock Resistance ΔTc  °C 400
 Maximum Use Temperature   °C  1000
Dielectric Strength 6.35mm ac-kV/mm (ac V/mil)  –
Dielectric Constant 1 MHz 25°C  –
Dielectric Loss (tan delta) 1 MHz 25°C  –


Sintered Silicon Carbide:

Item Unit Parameter
Density gm/cc 3.15
Crystal Size (Average) Microns 43169
Water absorption (open porosity) % 0
Gas permeability % 0
Color ¯ Black
Flexural Strength (MOR) 20°C MPa (psi x 103) 480 (70)
Elastic Modulus 20°C GPa (psi x 106)  410 (59)
Poisson’s Ratio 20°C ¯  0.21
Compressive Strength 20°C MPa (psi x 103)  3500 (507)
Hardness GPa (kg/mm2)  26 (2800)
R45N  –
Tensile Strength 25°C MPa (psi x 103)  –
Fracture Toughness K(I c) mpa m1/2  4
Thermal Conductivity 20°C W/m K 150
Coefficient of Thermal Expansion 25-1000°C X 10-6/°C 4.4
Specific Heat 100°C 880 J/kg*K 800
Thermal Shock Resistance   ΔTc  °C 300
 Maximum Use Temperature   °C  1600
Dielectric Strength 6.35mm ac-kV/mm (ac V/mil)  –
Dielectric Constant 1 MHz 25°C  –
Dielectric Loss (tan delta) 1 MHz 25°C  –



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