Silicon Carbide Coated Graphite Tray
  • Silicon Carbide Coated Graphite TraySilicon Carbide Coated Graphite Tray
  • Silicon Carbide Coated Graphite TraySilicon Carbide Coated Graphite Tray
  • Silicon Carbide Coated Graphite TraySilicon Carbide Coated Graphite Tray

Silicon Carbide Coated Graphite Tray

CVD process delivers extremely high purity and theoretical density of SiC coating with no porosity. With this process, Nextgen Advanced Materials supplies Silicon Carbide Coated Graphite Tray with high quality and fast delivery. Customization is also available.

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Product Description

High quality Silicon Carbide Coated Graphite Tray is offered by manufacturer Nextgen Advanced Materials INC.  CVD silicon carbide (SiC) coatings have lots of advantages, including ultra-high purity surfaces and extremely high wear resistance. The CVD process can provide SiC coating with extremely high purity and theoretical density without pores. Moreover, since silicon carbide is very hard, it can be polished to a mirror-like surface. 


Because the coating products have excellent performance in high vacuum and high-temperature environments, Silicon Carbide Coated Graphite Trays are very suitable for the semiconductor industry and other ultra-clean environments. CVD silicon carbide coating has been applied in semiconductor industries already, such as MOCVD tray, RTP, and oxide etching chamber since silicon nitride has great thermal shock resistance and can withstand high energy plasma.


Specification

Property
Compound Formula SiC
Molecular Weight 40.1
Appearance Black
Melting Point 2,730° C (4,946° F) (decomposes)
Density 3.0 to 3.2 g/cm3
Material Graphite, with CVD SiC coating
Purity >99.99% for SiC coating
Surface Zero porosity
Coating thickness 50~500um



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